The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Jul. 15, 2016
Applicant:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Inventor:
Takeshi Okagaki, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, unknown;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/576 (2013.01); H01L 27/0207 (2013.01);
Abstract
In order to realize a silicon PUF of lower power consumption, a semiconductor device includes first and second MIS transistors of the same conductive type in off-state coupled in series, as a PUF element. The PUF element outputs a signal of high level or low level depending on the potential of a connection node of the first and the second MIS transistors. Preferably, the MIS transistors are fin-type FETs.