The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Aug. 05, 2013
Applicant:

Applied Microstructures, Inc., San Jose, CA (US);

Inventors:

Boris Kobrin, Dublin, CA (US);

Nikunj Dangaria, Milpitas, CA (US);

Romuald Nowak, Cupertino, CA (US);

Michael T. Grimes, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/02 (2006.01); B81C 1/00 (2006.01); H01L 23/29 (2006.01); B81B 3/00 (2006.01); H01L 21/312 (2006.01); H01L 21/314 (2006.01); H01L 21/316 (2006.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); B81B 3/0075 (2013.01); B81C 1/0038 (2013.01); B81C 1/00206 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02214 (2013.01); H01L 21/02271 (2013.01); H01L 21/02304 (2013.01); H01L 21/3127 (2013.01); H01L 21/3141 (2013.01); H01L 21/3162 (2013.01); H01L 21/31604 (2013.01); H01L 21/31612 (2013.01); H01L 23/29 (2013.01); B81B 2207/115 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/12044 (2013.01);
Abstract

An article having a surface treated to provide a protective coating structure in accordance with the following method: vapor depositing a first layer on a substrate, wherein the first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon the first layer, wherein the second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon the second layer, wherein the third layer is a functional organic-comprising layer, wherein the functional organic-comprising layer is a SAM.


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