The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Aug. 31, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Koutarou Sho, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 11/00 (2006.01); H01L 21/66 (2006.01); G01B 11/27 (2006.01); H01L 23/544 (2006.01); H01L 21/67 (2006.01); G01Q 60/24 (2010.01); H01J 37/22 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01B 11/272 (2013.01); H01L 21/67259 (2013.01); H01L 21/67294 (2013.01); H01L 23/544 (2013.01); G01Q 60/24 (2013.01); H01J 37/22 (2013.01); H01L 2223/54426 (2013.01);
Abstract

According to one embodiment, there is provided a measurement method. The method includes measuring an amount of overlay shift between a first layer and a second layer using a first overlay mark and a second overlay mark. The first layer is provided as a layer including the first overlay mark above a first substrate. The second layer is provided as a layer including the second overlay mark above the first overlay mark. The method includes acquiring a parameter related to asymmetry of a shape of the second overlay mark. The method includes obtaining an amount of correction with respect to a measured value of the amount of overlay shift based on the acquired parameter and the measured amount of overlay shift.


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