The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Jun. 29, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Cheol Kim, Hwaseong-si, KR;
Dong-Hoon Khang, Daegu, KR;
Do-Hyoung Kim, Hwaseong-si, KR;
Seung-Jin Mun, Suwon-si, KR;
Yong-Joon Choi, Suwon-si, KR;
Seung-Mo Ha, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/3115 (2006.01); H01L 21/3105 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/0234 (2013.01); H01L 21/0275 (2013.01); H01L 21/02115 (2013.01); H01L 21/02271 (2013.01); H01L 21/02321 (2013.01); H01L 21/02323 (2013.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/31058 (2013.01); H01L 21/31155 (2013.01); H01L 29/66795 (2013.01);
Abstract
Methods for fabricating a semiconductor device include forming a composite film, forming a rough pattern on the composite film, forming a smooth pattern by subjecting the rough pattern to ion implantation and a plasma treatment, and patterning the composite film using the smooth pattern as a first mask.