The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Jun. 05, 2017
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Li-Che Chen, Hsinchu, TW;

Tzu-Hsuan Chen, Taipei, TW;

Hsing-Chao Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/44 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/304 (2013.01); H01L 21/76843 (2013.01); H01L 23/481 (2013.01);
Abstract

A semiconductor device includes a through-substrate via structure, a first metal layer, an electronic component over the through-substrate via structure, a second metal layer and another electronic component below the through-substrate via structure. The through-substrate via structure includes a through hole penetrating from a first surface to an opposite second surface of a semiconductor substrate, and an acute angle is included between a sidewall of the through hole and the second surface on a side of the semiconductor substrate. The through-substrate via structure also includes a conductive layer that fills the through hole, and a semiconductor layer disposed in the through hole and interposed between the conductive layer and the semiconductor substrate.


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