The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Apr. 10, 2017
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Naoyuki Kushihara, Annaka, JP;

Kazuaki Sumita, Annaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/56 (2006.01); B29C 70/72 (2006.01); B29C 70/88 (2006.01); C08G 59/42 (2006.01); C08G 59/62 (2006.01); C08L 63/00 (2006.01); H01L 23/29 (2006.01); B29K 63/00 (2006.01); B29K 105/20 (2006.01); B29L 9/00 (2006.01); B29L 31/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/56 (2013.01); B29C 70/72 (2013.01); B29C 70/882 (2013.01); C08G 59/4238 (2013.01); C08G 59/621 (2013.01); C08L 63/00 (2013.01); H01L 23/29 (2013.01); B29K 2063/00 (2013.01); B29K 2105/20 (2013.01); B29K 2995/0005 (2013.01); B29L 2009/00 (2013.01); B29L 2031/3481 (2013.01); C08L 2203/206 (2013.01); H01L 2924/186 (2013.01);
Abstract

Provided is an encapsulation method not causing molding failures such as filling failures and flow marks when collectively encapsulating a large-area silicon wafer or substrate with a resin composition. Specifically, provided is a method for encapsulating a semiconductor element-mounted base material, using a curable epoxy resin composition containing: an epoxy resin (A), a curing agent (B), a pre-gelatinizing agent (C) and a filler (D). The semiconductor element-mounted base material is collectively encapsulated under conditions of (a) molding method: compression molding, (b) molding temperature: 100 to 175° C., (c) molding period: 2 to 20 min and (d) molding pressure: 50 to 350 kN.


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