The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Nov. 17, 2015
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Masahiro Matsumoto, Ibaraki, JP;

Kazuyoshi Maekawa, Ibaraki, JP;

Yuichi Kawano, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4817 (2013.01); H01L 21/76852 (2013.01); H01L 23/53238 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 23/3121 (2013.01); H01L 23/525 (2013.01); H01L 24/13 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2221/1078 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05075 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/0612 (2013.01); H01L 2224/131 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45565 (2013.01); H01L 2224/45644 (2013.01); H01L 2224/45664 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48465 (2013.01); H01L 2924/181 (2013.01);
Abstract

The present invention makes it possible to improve the reliability of a semiconductor device. The semiconductor device has, over a semiconductor substrate, a pad electrode formed at the uppermost layer of a plurality of wiring layers, a surface protective film having an opening over the pad electrode, a redistribution line being formed over the surface protective film and having an upper surface and a side surface, a sidewall barrier film comprising an insulating film covering the side surface and exposing the upper surface of the redistribution line, and a cap metallic film covering the upper surface of the redistribution line. Then the upper surface and side surface of the redistribution line are covered with the cap metallic film or the sidewall barrier film and the cap metallic film and the sidewall barrier film have an overlapping section.


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