The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Mar. 15, 2010
Applicant:

Giacomo Barletta, Grottaglie, IT;

Inventor:

Giacomo Barletta, Grottaglie, IT;

Assignee:

STMICROELECTRONICS S.R.L., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28158 (2013.01); H01L 21/28008 (2013.01); H01L 29/42368 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 29/41766 (2013.01); H01L 29/7811 (2013.01);
Abstract

An embodiment for realizing a power device with trench-gate structure integrated on a semiconductor substrate, and including etching the semiconductor substrate to make a first trench having first side walls and a first bottom; and further etching said semiconductor substrate to make a second trench inside the first trench, realized in a self-aligned way and below this first trench, the first trench and the second trench defining the trench-gate structure with a bird beak-like transition profile suitable for containing a gate region.


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