The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Dec. 20, 2012
Applicant:

Imec, Leuven, BE;

Inventors:

Pieter Blomme, Heverlee, BE;

Dirk Wouters, Leuven, BE;

Assignee:

IMEC, Leuven, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/003 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0011 (2013.01); H01L 27/2454 (2013.01); H01L 27/2481 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/16 (2013.01); H01L 45/1666 (2013.01); H01L 45/1675 (2013.01); G11C 2213/71 (2013.01);
Abstract

The present invention provides a resistive memory array arranged in a 3D stack comprising a plurality of resistivity switching memory elements laid out in an array in a first and second direction, and stacked in a third direction, a plurality of first electrodes and a plurality of second electrodes extending in the first direction, each first electrode and each second electrode being associated with the at least one resistivity switching memory element, and a plurality of transistor devices, each transistor device being electrically coupled to one of the resistivity switching memory elements, an inversion or accumulation channel of a transistor device being adapted for forming a switchable resistivity path in the third direction, between the electrically coupled resistivity switching memory element and the associated second electrode, wherein the memory array furthermore comprises at least one third electrode provided in a trench through the stack.


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