The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Mar. 02, 2016
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Chengdu Boe Optoelectronics Technology Co., Ltd., Chengdu, CN;

Inventors:

Qingde Long, Beijing, CN;

Yulong Kang, Beijing, CN;

Yuan Liang, Beijing, CN;

Zhiyong Zhang, Beijing, CN;

Liwei Fan, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G02F 1/1335 (2006.01); G02B 5/20 (2006.01); G03F 7/00 (2006.01); G03F 7/095 (2006.01);
U.S. Cl.
CPC ...
G02F 1/133512 (2013.01); G02B 5/201 (2013.01); G02F 1/133516 (2013.01); G03F 7/0007 (2013.01); G03F 7/095 (2013.01); G03F 7/0955 (2013.01); G03F 7/2024 (2013.01); G03F 7/2032 (2013.01); G02F 2001/133519 (2013.01);
Abstract

The disclosure provides in some embodiments a method for fabricating a photoresist pattern, a color filter and a method for fabricating the same, and a display device. The method for fabricating a photoresist pattern includes coating negative photoresist on a base substrate to form a first photoresist layer, coating positive photoresist on the first photoresist layer to form a second photoresist layer, conducting a first exposure process on first regions of the second photoresist layer, conducting a first developing process to remove the positive photoresist within the first regions of the second photoresist layer and the negative photoresist within second regions of the first photoresist layer, so as to obtain a first photoresist pattern and a second photoresist pattern, conducting a second exposure process on the first photoresist pattern and the second photoresist pattern, and conducting a second developing process to remove the first photoresist pattern.


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