The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Feb. 20, 2014
Applicant:
Massachusetts Institute of Technology, Cambridge, MA (US);
Inventor:
Richard J. Molnar, Harvard, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 23/02 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 31/0304 (2006.01); C30B 7/10 (2006.01); C30B 9/04 (2006.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 23/025 (2013.01); C30B 7/105 (2013.01); C30B 9/04 (2013.01); C30B 25/183 (2013.01); C30B 25/20 (2013.01); C30B 29/40 (2013.01); C30B 29/406 (2013.01); H01L 31/03044 (2013.01); C30B 29/36 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02639 (2013.01); Y02E 10/544 (2013.01);
Abstract
Herein is provided a growth structure for forming a free-standing layer of crystalline material having at least one crystallographic symmetry. The growth structure includes a host substrate and a separation layer disposed on the host substrate for growth of a layer of the crystalline material thereon. The separation layer has a separation layer thickness, and is mechanically weaker than the host substrate and the crystalline material. An array of apertures is in the separation layer, each aperture extending through the separation layer thickness.