The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Oct. 16, 2014
Applicant:

Council of Scientific & Industrial Research, New Delhi, IN;

Inventors:

Nidhi Singh, New Delhi, IN;

Jiji Thomas Joseph Pulikkotil, New Delhi, IN;

Anurag Gupta, New Delhi, IN;

Kanika Anand, New Delhi, IN;

Ajay Dhar, New Delhi, IN;

Ramesh Chandra Budhani, New Delhi, IN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 41/02 (2006.01); B22F 3/10 (2006.01); C22C 12/00 (2006.01); H01F 1/047 (2006.01); H01F 1/08 (2006.01);
U.S. Cl.
CPC ...
B22F 3/10 (2013.01); C22C 12/00 (2013.01); H01F 1/047 (2013.01); H01F 1/08 (2013.01);
Abstract

Permanent magnets are used for several important applications, including dc electrical motors, wind turbines, hybrid automobile, and for many other applications. Modern widely used rare-earth based permanent magnet materials, such as Sm—Co and Nd—Fe—B, are generally intermetallic alloys made from rare earth elements and transition metals such as cobalt. However, the high costs of rare earth elements make the widespread use of these permanent magnets commercially unattractive. The present work focuses on producing a new permanent magnet material, with good magnetic properties, which is free from rare-earth elements and thus cost-effective. The present invention provides a process to synthesis boron doped manganese antimonide as an alternative to rare earth based permanent magnet materials. The boron doped manganese antimonide disclosed in this invention is free from rare-earth element with good magnetic properties. The material in the present study has been synthesized employing sequential combination of high energy ball milling, arc melting under argon atmosphere and again high energy ball milling followed by annealing. The annealed boron doped manganese antimonide shows improved magnetic properties as compared to manganese antimonide.


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