The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Dec. 07, 2015
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Osamu Matsumoto, Tokyo, JP;
Fukashi Morishita, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/378 (2011.01); H04N 5/365 (2011.01);
U.S. Cl.
CPC ...
H04N 5/378 (2013.01); H04N 5/3658 (2013.01);
Abstract
In a CMOS image sensor, a plurality of bias circuits are dispersedly arranged in an arrangement region of column circuits corresponding to each column of a pixel array. Each bias circuit generates a bias voltage on the basis of a reference current which has been input and supplies the generated bias voltage to the corresponding column circuitwhich is arranged in the vicinity. Thereby, luminance unevenness of a picked-up image caused by an IR drop of a ground wire for the column circuits is reduced.