The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Oct. 06, 2016
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Hai Yan, San Ramon, CA (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
Image sensors may include imaging pixels that have comparators to read out image pixel signals. An imaging pixel may include a photodiode, a floating diffusion region, and a transfer transistor that transfers charge from the photodiode to the floating diffusion region. The floating diffusion region may be coupled to a source follower transistor. The source follower transistor may be coupled to a current source. A row select transistor may be interposed between the source follower transistor and the current source. To form an in-column comparator stage and reduce power consumption, an additional transistor may be interposed between the row select transistor and the current source. The additional transistor may be a pMOS transistor and the source follower transistor may be an nMOS transistor. The additional transistor may have a gate that receives a searching voltage that is ramped from a maximum value to a minimum value.