The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

May. 17, 2016
Applicant:

Jvc Kenwood Corporation, Yokohama-Shi, Kanagawa, JP;

Inventors:

Ilya Koshkin, Woodland Hills, CA (US);

Lester Joseph Kozlowski, Simi Valley, CA (US);

Anders Kongstad Petersen, Carpinteria, CA (US);

Jeffrey Alan McKee, Springdale, UT (US);

Assignee:

JVC KENWOOD CORPORATION, Yokohama-Shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 5/235 (2006.01); H04N 5/225 (2006.01); H04N 5/378 (2011.01); H04N 5/374 (2011.01); H04N 5/355 (2011.01); H01L 27/146 (2006.01); H04N 5/376 (2011.01);
U.S. Cl.
CPC ...
H04N 5/2355 (2013.01); H04N 5/2253 (2013.01); H04N 5/2353 (2013.01); H04N 5/378 (2013.01); H04N 5/3765 (2013.01);
Abstract

Various technologies described herein pertain to combining high dynamic range techniques to enable rendering higher dynamic range scenes with an image sensor. The image sensor can implement a combination of spatial exposure multiplexing and temporal exposure multiplexing, for example. By way of another example, the image sensor can implement a combination of spatial exposure multiplexing and dual gain operation. Pursuant to another example, the image sensor can implement a combination of temporal exposure multiplexing and dual gain operation. In accordance with yet another example, the image sensor can implement a combination of spatial exposure multiplexing, temporal exposure multiplexing, and dual gain operation. The image sensor can be formed on a single wafer or the image sensor can be a 3D-IC image sensor that includes at least two vertically integrated layers.


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