The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Feb. 03, 2017
Applicant:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Inventors:
Kaiyuan Yang, Ann Arbor, MI (US);
David Theodore Blaauw, Ann Arbor, MI (US);
Dennis Michael Chen Sylvester, Ann Arbor, MI (US);
Assignee:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H04L 9/32 (2006.01); H03K 19/003 (2006.01);
U.S. Cl.
CPC ...
H03K 19/00315 (2013.01); H04L 9/3271 (2013.01); H04L 9/3278 (2013.01);
Abstract
Physically Unclonable Function (PUF) cells are described, suitable for CMOS technology, where each PUF cell is based upon a two-transistor amplifier design. A PUF cell includes a voltage generator followed by one or more amplifier stages. Also described is a method and apparatus for determining a dark bit mask for an array of PUF cells based on the two-transistor amplifier design.