The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Jul. 15, 2016
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Assignee:
PANASONIC CORPORATION, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03B 1/00 (2006.01); H03K 3/00 (2006.01); H03K 17/687 (2006.01); H01L 29/778 (2006.01); H01L 27/095 (2006.01); H01L 27/098 (2006.01); H01L 29/20 (2006.01); H01L 27/088 (2006.01); H01L 23/482 (2006.01); H01L 23/00 (2006.01); H03K 17/0412 (2006.01); H03K 17/16 (2006.01); H01L 27/06 (2006.01); H02M 3/158 (2006.01); H01L 23/522 (2006.01); H01L 29/417 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6871 (2013.01); H01L 23/4824 (2013.01); H01L 23/5226 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/45 (2013.01); H01L 27/0605 (2013.01); H01L 27/0883 (2013.01); H01L 27/095 (2013.01); H01L 27/098 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01); H02M 3/1588 (2013.01); H03K 17/04123 (2013.01); H03K 17/162 (2013.01); H03K 17/6877 (2013.01); H01L 29/1066 (2013.01); H01L 29/41758 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/06177 (2013.01); H01L 2224/131 (2013.01); H01L 2224/81801 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H02M 3/158 (2013.01); H03K 2017/6875 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0072 (2013.01); Y02B 70/1466 (2013.01);
Abstract
A semiconductor device is provided which realizes speed-up and cost reduction. The semiconductor device has a high side gate driver including a depression type FET and an enhancement type FET, a low side gate driver including a depression type FET and an enhancement type FET, and a high side power FET and a low side power FET as field-effect transistors, in which the high side gate driver, the low side gate driver, the high side power FET and the low side power FET are integrated in the same chip.