The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Feb. 01, 2016
Applicant:

Magneti Marelli S.p.a., Corbetta, Milan, IT;

Inventors:

Danilo Pritelli, Bologna, IT;

Rosanna Suglia, Bologna, IT;

Franco Ciampolini, Bologna, IT;

Gianluca Aurilio, Caserta, IT;

Assignee:

Magneti Marelli S.P.A., Corbetta, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); B60L 11/18 (2006.01); H02H 3/087 (2006.01); H02H 7/18 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); B60L 11/18 (2013.01); B60L 11/1851 (2013.01); H02H 3/087 (2013.01); H02H 7/18 (2013.01);
Abstract

The present invention relates to a solid-state relay including a power semiconductor switch device connected between a first electrical terminal and a second electrical terminal and having a command terminal. An electronic driving block is adapted to generate a command signal applied to the command terminal to switch the at least one semiconductor switch device from a closed/open state to an open/closed state to disconnect/connect the first electrical circuit portion from/to the second portion of the electrical circuit. An electronic block detects a current which crosses the power semiconductor switch device. The electronic detection block includes a first electronic device adapted to generate a first signal indicative of a difference of potential between the first and second terminals generated by the current which crosses a total resistance present between the first and second terminals of the power semiconductor switch device in the closed state. The total resistance comprises the sum of a first resistance associated with the semiconductor switch device in the closed state and of second bonding resistances associated with an electrical connection between one of the conductive terminals and the respective either first or second electrical terminal.


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