The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Dec. 27, 2016
Applicant:

Korea Electronics Technology Institute, Seongnam-si, Gyeonggi-do, KR;

Inventors:

Ki Jin Kim, Yongin-si, KR;

Kwang Ho Ahan, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/22 (2006.01); H03F 3/193 (2006.01); H03F 1/34 (2006.01);
U.S. Cl.
CPC ...
H03F 1/223 (2013.01); H03F 1/347 (2013.01); H03F 3/193 (2013.01); H03F 2200/405 (2013.01); H03F 2200/451 (2013.01); H03F 2200/537 (2013.01);
Abstract

An RF amplifier to increase a gain using a transformer is provided. The amplifier includes: a first transistor configured to generate a current by amplifying and converting an input voltage; a second transistor configured to amplify the generated current; and a first transformer configured to feed an emitter current of the second transistor back to a gate. Accordingly, Gof the transistor is boosted using the transformer, such that a high gain can be obtained with a low current. Therefore, a problem of a gain reduction caused by a parasitic capacitor at a high frequency can be solved.


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