The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Apr. 25, 2017
Applicant:

Institute of Semiconductors, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Ninghua Zhu, Beijing, CN;

Jianguo Liu, Beijing, CN;

Jinjin Guo, Beijing, CN;

Wei Chen, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/10 (2006.01); H01S 5/026 (2006.01); H01S 5/028 (2006.01); H01S 5/22 (2006.01); H01S 5/12 (2006.01); H01S 5/022 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1014 (2013.01); H01S 5/026 (2013.01); H01S 5/028 (2013.01); H01S 5/1003 (2013.01); H01S 5/12 (2013.01); H01S 5/22 (2013.01); H01S 5/022 (2013.01); H01S 5/10 (2013.01);
Abstract

The present invention discloses a semiconductor laser comprising an optical waveguide structure which may include a lower waveguide layer, an active layer of multiple quantum wells and an upper waveguide layer, which are successively stacked from bottom to top, a grating layer being formed on upper portion of the active layer, wherein the upper waveguide layer, a cladding layer and a contact layer are formed as a ridge which has a light incidence end surface and a light output end surface, wherein a beam expanding structure is formed on one end of the output end surface. The beam expanding structure has a beam expanding portion with a shape gradually contracted inwards from the light output end surface. Preferably, the beam expanding portion has a horizontal divergence angle of 5° to 20°.


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