The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Apr. 28, 2015
Applicants:

Samsung Electronics, Co. Ltd., Suwon-si, Gyeonggi-Do, KR;

Massachusetts Institute of Technology, Cambridge, MA (US);

Inventors:

William D. Richards, Cambridge, MA (US);

Shyue Ping Ong, San Diego, CA (US);

Yifei Mo, Greenbelt, MD (US);

Gerbrand Ceder, Wellesley, MA (US);

Lincoln Miara, Cambridge, MA (US);

Tomoyuki Tsujimura, Yokohama, JP;

Yan Wang, Cambridge, MA (US);

Young-Gyoon Ryu, Lexington, MA (US);

Naoki Suzuki, Ibaraki, JP;

Ichiro Uechi, Toyonaka, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 10/39 (2006.01); H01M 10/0562 (2010.01); C01B 25/14 (2006.01); H01M 4/38 (2006.01); H01M 10/05 (2010.01);
U.S. Cl.
CPC ...
H01M 10/0562 (2013.01); C01B 25/14 (2013.01); H01M 4/381 (2013.01); H01M 10/05 (2013.01); C01P 2002/30 (2013.01); C01P 2002/72 (2013.01); C01P 2006/40 (2013.01); H01M 2300/0068 (2013.01);
Abstract

A sodium-conductive solid-state electrolyte material includes a compound of the composition NaMPS, wherein M is selected from Ge, Si, and Sn. The material may have a conductivity of at least 1.0×10S/cm at a temperature of about 300K and may have a tetragonal microstructure, e.g., a skewed P1 crystallographic structure. Also provided are an electrochemical cell that includes the sodium-conductive solid-state electrolyte material and a method for producing the sodium-conductive solid electrolyte material via controlled thermal processing parameters.


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