The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Jul. 21, 2016
Applicant:
Youtec Co., Ltd., Chiba, JP;
Inventors:
Takeshi Kijima, Chiba, JP;
Yuuji Honda, Chiba, JP;
Assignee:
YOUTEC CO., LTD., Chiba, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/39 (2013.01); C01G 23/00 (2006.01); C01G 33/00 (2006.01); C23C 18/12 (2006.01); H01L 21/02 (2006.01); H01L 41/187 (2006.01);
U.S. Cl.
CPC ...
H01L 41/39 (2013.01); C01G 23/003 (2013.01); C01G 33/006 (2013.01); C23C 18/1216 (2013.01); C23C 18/1225 (2013.01); C23C 18/1254 (2013.01); C23C 18/1295 (2013.01); H01L 21/02197 (2013.01); H01L 21/02282 (2013.01); H01L 41/187 (2013.01);
Abstract
To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pbas A-site ions and containing Zrand Tias B-site ions, and the A-site contains Bias A-site compensation ions and the B-site contains Nbas B-site compensation ions.