The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
May. 15, 2015
The Hong Kong University of Science and Technology, Kowloon, HK;
Kei May Lau, Kowloon, HK;
Wing Cheung Chong, New Territories, HK;
THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Kowloon, HK;
Abstract
Techniques are provided for forming a gallium nitride flip-chip light-emitting diode. In an aspect, a device is provided that includes a gallium nitride layer, a passivation layer, a set of first conductive layers, and a second conductive layer. The gallium nitride layer is formed on a substrate that includes a first plurality of recesses associated with a first structure and a second plurality of recesses associated with a second structure, where the first plurality of recesses and the second plurality of recesses are associated with a first conductive material. The set of first conductive layers is formed on the passivation layer and corresponds to the first conductive material. The second conductive layer is formed on the passivation layer and corresponds to a second conductive material.