The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Sep. 02, 2016
Applicant:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Inventors:
Seung Kyu Choi, Ansan-si, KR;
Hee Sub Lee, Ansan-si, KR;
Soon Ho Ahn, Ansan-si, KR;
Chae Hon Kim, Ansan-si, KR;
Su Youn Hong, Ansan-si, KR;
Assignee:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/04 (2010.01); H01L 33/14 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/16 (2013.01); H01L 33/32 (2013.01); H01L 33/06 (2013.01); H01L 33/145 (2013.01);
Abstract
A light emitting device includes a substrate including gallium nitride, and a semiconductor layer disposed on the substrate, the semiconductor layer including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer, in which an angle defined between a crystal growth plane of the substrate and an m-plane thereof is in a range of 3.5° to 6.