The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
May. 04, 2016
Applicant:
Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;
Inventor:
Tomomitsu Risaki, Chiba, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7883 (2013.01); H01L 21/28273 (2013.01); H01L 29/42324 (2013.01); H01L 29/4983 (2013.01); H01L 29/513 (2013.01);
Abstract
A semiconductor memory device includes a first floating gate and a second floating gate of conductivity types with different polarities. Injection of electrons into the first floating gate via a tunnel insulating film is stored through a decrease in holes in a valence band of the second floating gate, and ejection of electrons from the first floating gate via the tunnel insulating film is stored through an increase in holes in the valence band of the second floating gate.