The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Feb. 06, 2017
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Akitaka Soeno, Toyota, JP;
Takashi Kuno, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A switching device includes a semiconductor substrate having a first element range and an ineffective range. First trenches extend in a first direction across the first element range and the ineffective range. Second trenches are provided in each inter-trench region within the first element range and are not provided within the ineffective range. A gate electrode is disposed in the trenches. No contact hole is provided in an interlayer insulating film within the ineffective range. The first metal layer covers the interlayer insulating film. The insulating protective film covers a portion of the first metal layer on its outer peripheral side within the ineffective range. The second metal region is in contact with the first metal layer within an opening of the insulating protective film, and is in contact with a side surface of the opening.