The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Mar. 10, 2017
Applicant:
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Inventor:
Junya Nishii, Kiyosu, JP;
Assignee:
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/812 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01L 21/28185 (2013.01); H01L 21/28211 (2013.01); H01L 29/518 (2013.01); H01L 29/66666 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/8122 (2013.01);
Abstract
A technique of manufacturing a semiconductor device of stable operation is provided. There is provided a method of manufacturing a semiconductor device comprising a first process of forming an insulating film from a nitrogen-containing organic metal used as raw material, on a semiconductor layer by atomic layer deposition; a second process of processing the insulating film by oxygen plasma treatment in an atmosphere including at least one of oxygen and ozone; and a third process of processing the insulating film by heat treatment in a nitrogen-containing atmosphere, after the second process.