The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Jul. 16, 2015
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Chongqing Boe Optoelectronics Technology Co.,ltd., Chongqing, CN;

Inventors:

Wu Wang, Beijing, CN;

Haijun Qiu, Beijing, CN;

Fei Shang, Beijing, CN;

Guolei Wang, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); G02F 1/1362 (2006.01); H01L 29/786 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41733 (2013.01); G02F 1/1362 (2013.01); H01L 29/786 (2013.01);
Abstract

Disclosed is a thin film transistor, including a gate electrode, a source electrode and a drain electrode. The source electrode includes a loop structure with an opening, and a width of the opening is less than a maximum width of an inner ring of the loop structure of the source electrode in a direction identical to a direction of the width of the opening. The drain electrode is surrounded by the loop structure, and is not in contact with the source electrode. The drain electrode is distant from the inner ring of the loop structure of the source electrode at a same interval.


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