The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Sep. 08, 2016
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A semiconductor device, including a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer and having a band gap width larger than or equal to a band gap width of the first nitride semiconductor layer, first, second, and third electrodes provided on the second nitride semiconductor layer, an insulation layer provided on the second nitride semiconductor layer and between the first and second electrodes, and a conductor provided within the insulation layer between the second and third electrodes and connecting the second and third electrodes to each other, or the conductor provided within the insulation layer between the first and second electrodes and connecting the first and second electrodes to each other, the conductor including a plurality of conductive regions arranged in a first direction from the first electrode toward the second electrode, the conductive regions being electrically connected to one another.