The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Jan. 25, 2017
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Satoshi Kato, Kawasaki, JP;

Shuji Tobashi, Hiratsuka, JP;

Masayuki Tsuchiya, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H04N 5/378 (2013.01);
Abstract

A solid-state image sensor is provided. The sensor includes a first transistor including a first diffusion region, a second transistor including a second diffusion region and an insulation film arranged over these transistors. The insulation film includes a first and a second film. A first portion of the first diffusion region covered with the insulation film includes a second portion covered with only the second film. A third portion of the second diffusion region covered with the insulation film includes a fourth portion covered with the first and second film. A stress in the fourth portion is larger than the second portion. A proportion of an area of the first portion except the second portion to an area of the first portion is lower than a proportion of an area of the fourth portion to an area of the third portion.


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