The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Sep. 16, 2016
Toshiba Memory Corporation, Minato-ku, JP;
Fumitaka Arai, Yokkaichi, JP;
Tatsuya Kato, Yokkaichi, JP;
Satoshi Nagashima, Yokkaichi, JP;
Katsuyuki Sekine, Yokkaichi, JP;
Yuta Watanabe, Yokkaichi, JP;
Keisuke Kikutani, Yokkaichi, JP;
Atsushi Murakoshi, Yokkaichi, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
A semiconductor memory device includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a first conductive film provided on a first region of the first insulating film, a second conductive film provided on a second region of the first insulating film, a first stacked body provided on the first conductive film, a second stacked body provided on the second conductive film, a first semiconductor pillar, and two conductive pillars. In the first stacked body, a second insulating film and an electrode film are stacked alternately. In the second stacked body, a third insulating film and a first film are stacked alternately. The two conductive pillars extend in the first direction through the second stacked body, are separated from the second conductive film, sandwich the second conductive film, and are connected at a bottom ends of the second conductive pillars to the semiconductor substrate.