The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Apr. 27, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Robert G. Biskeborn, Hollister, CA (US);

Calvin S. Lo, Saratoga, CA (US);

Cherngye Hwang, San Jose, CA (US);

Andrew C. Ting, El Prado, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); H01J 37/32 (2006.01); G11B 5/31 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32825 (2013.01); G11B 5/3163 (2013.01); H01J 37/32816 (2013.01); H01J 37/3411 (2013.01); H01J 2237/334 (2013.01);
Abstract

A plasma sputtering apparatus according to one embodiment includes a chamber and a reservoir in fluidic communication with the chamber. The reservoir stores a vapor source therein, and is configured to release vapor at a predetermined rate. The vapor released by the reservoir is effective to diminish an etch rate of a first magnetic material, the vapor having a smaller effect on an etch rate of a second magnetic material that is different than the first magnetic material. The apparatus also includes a mount for a substrate and a plasma source.


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