The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Aug. 20, 2013
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventor:

Kaoru Tsuchiya, Atsugi, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06K 19/07 (2006.01); G06K 19/077 (2006.01);
U.S. Cl.
CPC ...
G06K 19/0723 (2013.01); G06K 19/07749 (2013.01);
Abstract

A semiconductor device that is resistant to bending stress and has a structure in which an antenna circuit, an electric double layer capacitor for storing electricity, and the like are formed over a signal processing circuit that is provided over a substrate and has a charging circuit. The signal processing circuit having the charging circuit is provided over a substrate, and the antenna circuit and the electric double layer capacitor are provided over the signal processing circuit. The antenna circuit is electrically connected to the signal processing circuit, and the electric double layer capacitor is electrically connected to the charging circuit. With such a structure, a wiring for connecting the charging circuit and the electric double layer capacitor can be made short. Accordingly, a semiconductor device that is resistant to bending stress can be provided.


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