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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9964854 B1

PDFFull Text
Date of Patent:
May. 08, 2018

Filed:

Mar. 28, 2017

Doping method for array substrate and manufacturing equipment of the same

Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventors:

Jingfeng Xue, Guangdong, CN;

Xin Zhang, Guangdong, CN;

Gui Chen, Guangdong, CN;

Assignee:

Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;

Attorney:

Andrew C. Cheng

Primary Examiner:

Cheung Lee

Int. Cl.
CPC ...
H01L 21/67 (2006.01); G03F 7/20 (2006.01); H01L 29/786 (2006.01); H01L 21/223 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); G02F 1/1368 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70058 (2013.01); H01L 21/223 (2013.01); H01L 21/266 (2013.01); H01L 21/2652 (2013.01); H01L 21/67011 (2013.01); H01L 27/127 (2013.01); H01L 27/1222 (2013.01); H01L 27/1288 (2013.01); H01L 29/66492 (2013.01); H01L 29/66598 (2013.01); H01L 29/66757 (2013.01); H01L 29/786 (2013.01); H01L 29/78621 (2013.01); H01L 29/78675 (2013.01); G02F 1/1368 (2013.01); G02F 2202/104 (2013.01); H01L 21/0274 (2013.01);
Abstract

A device for manufacturing an array substrate includes an exposure device for using a halftone mask to form a photoresist pattern layer on a gate insulation layer of a substrate. A polysilicon pattern layer is disposed on the substrate. A gate insulation layer covers the polysilicon pattern layer. The photoresist pattern layer includes a hollow portion corresponding to a heavily doping region of the polysilicon pattern layer, a first photoresist portion corresponding to a lightly doping region of the polysilicon pattern layer, and a second photoresist portion corresponding to an undoped region of the polysilicon pattern layer. The first photoresist portion is thinner than the second photoresist portion. A doping device is used for performing one doping process to the polysilicon pattern layer such that the heavily doping region and the lightly doping region are formed simultaneously.

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