The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Aug. 27, 2016
Applicant:

Lg Chem, Ltd., Seoul, KR;

Inventors:

Kerfegar K. Katrak, Fenton, MI (US);

Mehdi Rexha, Sterling Heights, MI (US);

Assignee:

LG Chem, Ltd., Seoul, KR;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/40 (2014.01); G01K 13/00 (2006.01); G01R 31/327 (2006.01); H02M 3/158 (2006.01);
U.S. Cl.
CPC ...
G01R 31/40 (2013.01); G01K 13/00 (2013.01); G01R 31/327 (2013.01); H02M 3/158 (2013.01);
Abstract

A diagnostic system for a DC-DC voltage converter is provided. The diagnostic system includes a first temperature sensor generating a first output voltage indicating a temperature level of a high voltage bi-directional MOSFET switch. The diagnostic system includes a microcontroller that samples the first output voltage at a first sampling rate utilizing a first channel in a first bank of channels to obtain a first predetermined number of voltage samples. The microcontroller determines a first number of voltage samples in the first predetermined number of voltage samples in which the first output voltage is greater than a first threshold voltage. The microcontroller sets a first temperature diagnostic flag equal to a first fault value if the first number of voltage samples is greater than a first threshold number of voltage samples indicating the high voltage bi-directional MOSFET switch has an over-temperature condition.


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