The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Dec. 04, 2014
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Stefan Grötsch, Bad Abbach, DE;

Norbert Häfner, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F21S 8/10 (2006.01); H01L 25/075 (2006.01); H01L 25/16 (2006.01); F21V 23/00 (2015.01); F21V 23/04 (2006.01); H01L 33/48 (2010.01); H01L 27/15 (2006.01); H01L 33/50 (2010.01); H01L 33/56 (2010.01); H01L 33/60 (2010.01); F21Y 101/00 (2016.01);
U.S. Cl.
CPC ...
F21S 48/115 (2013.01); F21S 48/1109 (2013.01); F21V 23/005 (2013.01); F21V 23/04 (2013.01); H01L 25/0753 (2013.01); H01L 25/167 (2013.01); H01L 33/486 (2013.01); F21Y 2101/00 (2013.01); H01L 27/156 (2013.01); H01L 33/505 (2013.01); H01L 33/56 (2013.01); H01L 33/60 (2013.01); H01L 2224/48091 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An optoelectronic semiconductor component and an adaptive headlight are disclosed. In an embodiment an optoelectronic semiconductor component includes a carrier having a carrier top side and a carrier underside, a plurality of active zones, which are fitted at the carrier top side and which are designed for emitting radiation, electrical contact locations at the carrier underside, which are designed for electrically connecting the semiconductor component and a drive unit for electrically addressing the semiconductor component and for electrically driving the active zones, wherein the active zones are fitted in a regular grid at the carrier top side, wherein the grid has a grid pitch, wherein geometrical midpoints of radiation main sides of the active zones lie on grid points of the grid, and wherein a distance between the geometrical midpoints of marginal active zones and a closest edge of the carrier is at most 50% of the grid pitch.


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