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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9963785 B1

PDFFull Text
Date of Patent:
May. 08, 2018

Filed:

Mar. 25, 2015

Substrate processing apparatus and semiconductor device manufacturing method

Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Masayuki Asai, Toyama, JP;

Koichi Honda, Toyama, JP;

Mamoru Umemoto, Toyama, JP;

Kazuyuki Okuda, Toyama, JP;

Assignee:

HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;

Attorney:

Solaris Intellectual Property Group, PLLC

Primary Examiner:

Karla A Moore

Int. Cl.
CPC ...
C23C 16/34 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); C23C 16/52 (2006.01); C23C 16/08 (2006.01); C23C 16/40 (2006.01); C23C 16/509 (2006.01); C23C 16/54 (2006.01); H01L 21/033 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
C23C 16/52 (2013.01); C23C 16/08 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/4401 (2013.01); C23C 16/4408 (2013.01); C23C 16/45542 (2013.01); C23C 16/45544 (2013.01); C23C 16/509 (2013.01); C23C 16/54 (2013.01); H01J 37/3244 (2013.01); H01J 37/32899 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02175 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/02568 (2013.01); H01L 21/0337 (2013.01); H01L 21/32051 (2013.01); H01L 21/32053 (2013.01);
Abstract

Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a metal film or a GST film by supplying a first processing gas to a substrate, on a surface of which the metal film or the GST film is formed, without supplying a second processing gas; and performing a formation process to the substrate to which the pre-process has been performed such that a film is formed on the metal film or the GST film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

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