Solid-state imaging device

Abstract

There are provided a first semiconductor substrate in which a plurality of photoelectric conversion circuits, which are some circuit elements of the pixel cells including the photoelectric conversion unit, are formed in a two-dimensional matrix, a second semiconductor substrate in which a plurality of memory circuits, which are some other circuit elements of the pixel cells, are formed in a two-dimensional matrix, wherein the some other circuit elements of the pixel cells include memory units that correspond to the photoelectric conversion circuits, store electric signals output by the photoelectric conversion units, and output pixel signals according to the electric signals, and a connection electrode electrically connected to a signal line of the photoelectric conversion circuits and a signal line of the memory circuits, wherein the pixel cells are divided into a plurality of pixel groups in which the pixel cells are combined so that adjacent pixel cells are not included if pixel cells corresponding to light beams of the same wavelength band are considered to be arranged on one surface, wherein the same connection electrode is shared between the photoelectric conversion circuits and between the memory circuits of the pixel cells included in the same pixel group, and wherein signal lines of the photoelectric conversion circuits and signal lines of the memory circuits of the pixel cells included in different pixel groups are connected by different connection electrodes.