The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
May. 02, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/06 (2006.01); H04B 7/00 (2006.01); H04B 1/04 (2006.01); H03F 3/19 (2006.01); H03F 3/24 (2006.01); H04W 84/04 (2009.01);
U.S. Cl.
CPC ...
H04B 1/0475 (2013.01); H03F 3/19 (2013.01); H03F 3/245 (2013.01); H03F 2200/165 (2013.01); H03F 2200/333 (2013.01); H03F 2200/411 (2013.01); H03F 2200/451 (2013.01); H04B 2001/0408 (2013.01); H04W 84/042 (2013.01);
Abstract
Provided are a semiconductor device and an operating method thereof. A semiconductor device includes a mixer configured to upconvert a baseband signal using a local oscillator (LO) signal; and a notch filter configured to receive the upconverted signal from the mixer and filter notch frequency components, the notch filter further configured to resonate at a fundamental frequency to provide a higher impedance and resonate at a notch frequency different from the fundamental frequency to provide a lower impedance.