The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2018

Filed:

Jul. 26, 2016
Applicants:

Cambridge Display Technology Limited, Godmanchester, GB;

Sumitomo Chemical Company Limited, Tokyo, JP;

Inventors:

Thomas Kugler, Cambridge, GB;

Sheena Zuberi, Godmanchester, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/50 (2006.01); C08G 73/00 (2006.01); C08G 61/12 (2006.01);
U.S. Cl.
CPC ...
H01L 51/002 (2013.01); C08G 61/126 (2013.01); H01L 51/0003 (2013.01); H01L 51/0027 (2013.01); H01L 51/5004 (2013.01); H01L 51/5092 (2013.01); C08G 61/123 (2013.01); C08G 73/00 (2013.01); C08G 2261/124 (2013.01); C08G 2261/1412 (2013.01); C08G 2261/3142 (2013.01); C08G 2261/3223 (2013.01); C08G 2261/3246 (2013.01); C08G 2261/514 (2013.01); C08G 2261/792 (2013.01); C08G 2261/95 (2013.01); H01L 51/0026 (2013.01); H01L 51/0035 (2013.01); H01L 51/0036 (2013.01); H01L 51/0039 (2013.01); H01L 51/0043 (2013.01); H01L 51/0072 (2013.01); H01L 2251/552 (2013.01);
Abstract

A method of forming a n-doped semiconductor layer wherein a film comprising an organic semiconductor and an n-dopant reagent is irradiated by light having a wavelength that is within an absorption range of the organic semiconductor, and wherein an absorption maximum wavelength of the n-dopant precursor is shorter than any peak wavelength of the light. The n-doped semiconductor layer may be an electron-injection layer of an organic light-emitting device.


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