The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2018

Filed:

Oct. 07, 2016
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Tae Gyun Kim, Ansan-si, KR;

Joon Hee Lee, Ansan-si, KR;

Ki Hyun Kim, Ansan-si, KR;

Sung Su Son, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/10 (2010.01); H01L 33/14 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/145 (2013.01); H01L 33/10 (2013.01); H01L 33/38 (2013.01);
Abstract

A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers, an active layer, a first electrode electrically connected to the first conductive type semiconductor layer, a current blocking layer disposed on a lower surface of the light emitting structure, and a second electrode electrically connected to the second conductive type semiconductor layer. The second electrode includes a first reflective metal layer adjoining the second conductive type semiconductor layer, and a second reflective metal layer covering a lower surface of the current blocking layer and a lower surface of the first reflective metal layer, and adjoining the second conductive type semiconductor layer. A contact resistance between the second reflective metal layer and the second conductive type semiconductor layer is higher than a contact resistance between the first reflective metal layer and the second conductive type semiconductor layer.


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