The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Jul. 15, 2016
Korea Electronics Technology Institute, Seongnam-si, Gyeonggi-do, KR;
Suk Won Jung, Osan-si, KR;
Yeon Shik Choi, Seoul, KR;
Young Chang Jo, Yongin-si, KR;
Jae Gi Son, Yongin-si, KR;
Ki Man Jeon, Seongnam-si, KR;
Woo Kyeong Seong, Seongnam-si, KR;
Kook Nyung Lee, Seoul, KR;
Min Ho Lee, Seoul, KR;
Hyuck Ki Hong, Uijeongbu-si, KR;
KOREA ELECTRONICS TECHNOLOGY INSTITUTE, Seongnam-si, KR;
Abstract
Disclosed is an avalanche photodiode using a silicon nanowire, including a first silicon nanowire formed of silicon (Si), a first conductive region formed by doping one surface of the first silicon nanowire with a first dopant, and a second conductive region formed by doping one surface of the first silicon nanowire with a second dopant having a conductive type different from that of the first dopant so as to be arranged continuously in a longitudinal direction from the first conductive region, wherein, when the magnitude of a reverse voltage applied to both ends of the first silicon nanowire is equal to or greater than a preset breakdown voltage, avalanche multiplication of inner current occurs due to the incidence of light from the outside.