The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Jul. 06, 2017
Lg Display Co., Ltd., Seoul, KR;
Min-Cheol Kim, Goyang-si, KR;
Youn-Gyoung Chang, Goyang-si, KR;
Kwon-Shik Park, Seoul, KR;
So-Hyung Lee, Goyang-si, KR;
Ho-Young Jung, Paju-si, KR;
Ha-Jin Yoo, Paju-si, KR;
Jeong-Suk Yang, Asan-si, KR;
LG DISPLAY CO., LTD., Seoul, KR;
Abstract
A method for manufacturing a semiconductor device is discussed. The method includes forming a gate electrode on a substrate, forming a gate insulating film over the substrate, depositing an In—Ga—Zn oxide over the gate insulating film while heating the substrate to a temperature of 200 to 300° C., an atomic percent ratio of Zn in the In—Ga—Zn oxide as-deposited being higher than that of In or Ga, heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an active layer crystallized throughout an entire thickness of the active layer, and forming a source electrode and a drain electrode.