The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Apr. 02, 2012
Yuhei Sato, Atsugi, JP;
Keiji Sato, Isehara, JP;
Toshinari Sasaki, Tochigi, JP;
Tetsunori Maruyama, Atsugi, JP;
Atsuo Isobe, Isehara, JP;
Tsutomu Murakawa, Isehara, JP;
Sachiaki Tezuka, Atsugi, JP;
Yuhei Sato, Atsugi, JP;
Keiji Sato, Isehara, JP;
Toshinari Sasaki, Tochigi, JP;
Tetsunori Maruyama, Atsugi, JP;
Atsuo Isobe, Isehara, JP;
Tsutomu Murakawa, Isehara, JP;
Sachiaki Tezuka, Atsugi, JP;
Other;
Abstract
To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented.