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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9960268 B1

PDFFull Text
Date of Patent:
May. 01, 2018

Filed:

Oct. 07, 2016

Semiconductor devices, power semiconductor devices, and methods for forming a semiconductor device

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Markus Zundel, Egmating, DE;

Christian Kampen, Munich, DE;

Jacob Tillmann Ludwig, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Dao H Nguyen

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01);
Abstract

A semiconductor device includes a drift region of a device structure arranged in a semiconductor layer. The drift region includes at least one first drift region portion and at least one second drift region portion. A majority of dopants within the first drift region portion are a first species of dopants having a diffusivity less than a diffusivity of phosphor within the semiconductor layer. Further, a majority of dopants within the second drift region portion are a second species of dopants. Additionally, the semiconductor device includes a trench extending from a surface of the semiconductor layer into the semiconductor layer. A vertical distance of a border between the first drift region portion and the second drift region portion to the surface of the semiconductor layer is larger than 0.5 times a maximal depth of the trench and less than 1.5 times the maximal depth of the trench.

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