The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Oct. 13, 2016
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Takahiro Nakamoto, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/477 (2006.01); H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H01L 29/205 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/812 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/28264 (2013.01); H01L 21/28587 (2013.01); H01L 21/30612 (2013.01); H01L 21/3247 (2013.01); H01L 29/205 (2013.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/42316 (2013.01); H01L 29/42376 (2013.01); H01L 29/495 (2013.01); H01L 29/66462 (2013.01); H01L 29/66871 (2013.01); H01L 29/812 (2013.01); H01L 29/8128 (2013.01); H01L 29/475 (2013.01);
Abstract
A field effect transistor according to the present invention includes a semiconductor layer including a groove, an insulating film formed on an upper surface of the semiconductor layer and having an opening above the groove and a gate electrode buried in the opening to be in contact with side surfaces and a bottom surface of the groove and having parts being in contact with an upper surface of the insulating film on both sides of the opening, wherein the gate electrode has a T-shaped sectional shape in which a width of an upper end is larger than a width of the upper surface of the insulating film.