The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Aug. 07, 2013
Guang Zhou New Vision Opto-electronic Technology Co., Ltd., Guangzhou, Guangdong, CN;
Miao Xu, Guangdong, CN;
Dongxiang Luo, Guangdong, CN;
Hongmeng Li, Guangdong, CN;
Jiawei Pang, Guangdong, CN;
Ying Guo, Guangdong, CN;
Lang Wang, Guangdong, CN;
Guang Zhou New Vision Opto-Electronic Technology Co., Ltd., Guangzhou, Guangdong, CN;
Abstract
A Metal Oxide Thin Film Transistor (MOTFT) and a preparation method thereof are provided. The preparation method includes the following steps in turn: Step a: a metal conductive layer is prepared and patterned as a gate on a substrate; Step b: a first insulating thin film is deposited as a gate insulating layer on the metal conductive layer; Step c: a metal oxide thin film is deposited and patterned as an active layer on the gate insulating layer; Step d: an organic conductive thin film is deposited as a back channel etch protective layer on the active layer; Step e: a metal layer is deposited on the back channel etch protective layer and then patterned as pattern of a source electrode and a drain electrode; Step f: a second insulating thin film is deposited as a passivation layer on the source electrode and the drain electrode.