logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9960238 B1

PDFFull Text
Date of Patent:
May. 01, 2018

Filed:

May. 22, 2015

Nanopillar field-effect and junction transistors with functionalized gate and base electrodes

Applicants:

California Institute of Technology, Pasadena, CA (US);

Sanofi, Paris, FR;

Inventors:

Aditya Rajagopal, Irvine, CA (US);

Chieh-feng Chang, Pasadena, CA (US);

Oliver Plettenburg, Frankfurt, DE;

Stefan Petry, Frankfurt, DE;

Axel Scherer, Barnard, VT (US);

Charles L. Tschirhart, Pasadena, CA (US);

Assignees:

CALIFORNIA INSTITUTE OF TECHNOLOGY, Pasadena, CA (US);

SANOFI, Paris, FR;

Attorney:

Steinfl + Bruno LLP

Primary Examiner:

Erik B Crawford

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/41 (2006.01); H01L 29/73 (2006.01); H01L 29/78 (2006.01); B82Y 15/00 (2011.01); H01L 29/732 (2006.01); H01L 29/06 (2006.01); G01N 27/414 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
H01L 29/413 (2013.01); B82Y 15/00 (2013.01); G01N 27/4145 (2013.01); G01N 27/4146 (2013.01); H01L 29/0676 (2013.01); H01L 29/45 (2013.01); H01L 29/49 (2013.01); H01L 29/73 (2013.01); H01L 29/732 (2013.01); H01L 29/735 (2013.01); H01L 29/78 (2013.01);
Abstract

Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These transistors have a nanopillar with a functionalized layer contacted to either the base or the gate electrode. The functional layer can bind molecules, which causes an electrical signal in the sensor.

Find Patent Forward Citations

Rajagopal, Aditya. (2018). Nanopillar field-effect and junction transistors with functionalized gate and base electrodes (U.S. Patent No. 9960238). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9960238

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…