The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Oct. 07, 2014
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0696 (2013.01); H01L 29/4236 (2013.01); H01L 29/78 (2013.01); H01L 27/0629 (2013.01); H01L 27/0883 (2013.01); H01L 29/2003 (2013.01);
Abstract
In one embodiment, a method of forming an MOS transistor includes forming a threshold voltage (Vth) of the MOS transistor to have a first value at interior portions of the MOS transistor and a second value at other locations within the MOS transistor that are distal from the interior portion wherein the second value is less than the first value.