The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Jun. 21, 2011
Kazutaka Kuriki, Kanagawa, JP;
Michiko Konishi, Kanagawa, JP;
Asami Tadokoro, Tokyo, JP;
Yasunori Yoshida, Aichi, JP;
Kiyofumi Ogino, Kanagawa, JP;
Toshihiko Takeuchi, Kanagawa, JP;
Kazutaka Kuriki, Kanagawa, JP;
Michiko Konishi, Kanagawa, JP;
Asami Tadokoro, Tokyo, JP;
Yasunori Yoshida, Aichi, JP;
Kiyofumi Ogino, Kanagawa, JP;
Toshihiko Takeuchi, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
It is an object to improve performance of a power storage device, such as cycle characteristics. A power storage device includes a current collector and a crystalline semiconductor layer including a whisker, which is formed on and in close contact with the current collector. Separation of the crystalline semiconductor layer is suppressed by an increase of adhesion, whereby cycle characteristics in which a specific capacity of a tenth cycle number with respect to a first cycle number is greater than or equal to 90% is realized. In addition, cycle characteristics in which a specific capacity of a hundredth cycle number with respect to a first cycle number is greater than or equal to 70% is realized.